| PART |
Description |
Maker |
| IXTH12N120 |
Discrete MOSFETs: Standard N-channel Types
Power MOSFET, Avalanche Rated High Voltage
|
IXYS Corporation
|
| IXTN21N100 IXTK21N100 |
Discrete MOSFETs: Standard N-channel Types
High Voltage MegaMOSTMFETs
|
IXYS[IXYS Corporation]
|
| FDD6N50 FDU6N50 |
N-Channel UniFETTM MOSFET 500V, 6A, 900m
Discrete MOSFET
|
Fairchild Semiconductor
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| DFLS1200 DFLS1200-7 DFLS120008 DFLS1200-15 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI?123
|
Diodes Incorporated
|
| BAS20DWQ-13 BAS21DW-7 BAS20DW-7 BAS20DW-13 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
SURFACE MOUNT HIGH VOLTAGE DUAL SWITCHING DIODE
|
Diodes Incorporated
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
| VSM1206 VSM1206KCBT VSM1206KDBT VSM1206KDBW VSM120 |
Bulk Metal? Foil Technology Discrete High Precision Surface Mount Chip Resistor
Bulk Metal庐 Foil Technology Discrete High Precision Surface Mount Chip Resistor
Bulk Metal垄莽 Foil Technology Discrete High Precision Surface Mount Chip Resistor
Bulk Metal㈢ Foil Technology Discrete High Precision Surface Mount Chip Resistor
|
VISAY[Vishay Siliconix]
|
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| STW9N150 W9N150V |
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH?/a> Power MOSFET
N-channel 1500V - 2.2ohm - 8A - TO-247 - Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
